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Diamond Si GaAs SiC cBN Polycrystal HOD Heteroepi; Lattice constant (Å) 3.567: 5.431: 5.653: 4.359: 3.615 : Density (g/cm 3) 3.52: 2.42: 5.32: 3.16: 3.48 : Thermal conductivity (W/cm·K)
fcc-Al; fcc-Au; fcc-Ni; bcc-Fe; hcp-Ti; diamond Si; rutile-TiO2; a-quartz(SiO2) 3C-SiC; GaAs . Copyright (C) 2008 AIST. All Rights Reserved.
Title: Experimental observation of high velocity pseudo-SAWs in ZnO/diamond/Si multilayers: Journal: A0437C (1051-0117) Proc. IEEE Ultrason. Symp.
(Figure1 A /X ray detector system) (Figure2 Lattice structure of diamond, Si and Germanium.)
Diamond: Si: GaAs: Density (g/cm 3) 3.17-3.21: 6.095-3.26: 3.49: 3.52: 2.326: 5.32: lattice (Å) 4.38: a=3.09. c=10.08: a=3.08. c=15.12: a=3.18. c=5.17: 4.520: a=3.111. c=4.978: 3.616
Journal of Crystal Growth 283 (2005) 367-372 The growth of nano-scale diamond tips on diamond/Si Ya KoChi h a, Jennchang Hwang a, , Yu Lun Chueh a, LiJen Chou a, An PinLe e b ...
DIAMOND-SI TECH COMPANY LIMITED. Address: No. 96, Da-Shueng 7 Rd., Tainan Science-Based Ind. Tainan County Taiwan ...
Diamond Si GaAs SiC cBN Polycrystal HOD Heteroepi; Lattice constant (Å) 3.567: 5.431: 5.653: 4.359: 3.615 : Density (g/cm 3) 3.52: 2.42: 5.32: 3.16: 3.48 : Thermal conductivity (W/cm·K)
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