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New Products > GaN HEMTs(High Electron Mobility Transistors) For General-Purpose ... Internally Matched @2.14GHz. Note) Tc(op)=+25 ° C
[2]H. W. Huang, H. C. Kuo, C. F. Lai, C. E. Lee, C. W. Chiu, T. C. Lu, S. C. Wang, C. H. Lin, and K. M. Leung, "High-performance GaN-based vertical-injection light-emitting ...
Japan Advanced Institute of Science and Technology JAIST Repository https://dspace.jaist.ac.jp/ Title High T_C ferromagnetism in diluted magnetic semiconducting GaN:Mn films ...
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