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High-Density Full-CMOS SRAM Cell Technology with a Deep Sub-Micron Spacing between nMOS and pMOSFET Fumitomo MATSUOKA Kazunari ISHIMARU Hiroshi GOJOHBORI Hidetoshi KOIKE Yukari ...
Hidetoshi Koike, Toshiba Corp. Semiconductor Company Kiyotaka Imai, KLA-Tencor Japan Ltd. Committee: Kazunori Kato, Advanced Interface Technology Corp.
Hidetoshi Koike, Toshiba Corporation Committee leader: Katsutoshi Ozawa, OMRON Corporation Shin-ichi Imai, Panasonic Corporation Isamu Namose, Seiko Epson Corporation
Hidetoshi Koike, Toshiyuki Enda, Fumitomo Matsuoka and Naoyuki Shigyo 5507-5509 : Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N 2 O Nitrided ...
Hidetoshi KOIKE, Yukari UNNO, Manabu SAI, Toshiyuki KONDO, Ryuji ICHIKAWA and Masakazu KAKUMU . A Bipolar-Based 0.5â╩m BiCMOS Technology on Bonded SOI for
Hidetoshi Koike, Toshiyuki Enda, Fumitomo Matsuoka and Naoyuki Shigyo 5507-5509 : Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N 2 ...
Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope: Hidetoshi Koike, Toshiyuki Enda ...
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