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Yuji Komatsu, Keiji Hosotani, Takashi Fuyuki and Hiroyuki Matsunami 5431-5435 : Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under ...
Keiji Hosotani, Makoto Nagamine 1, Tomomasa Ueda 1, Hisanori Aikawa 1, Sumio Ikegawa 1, Yoshiaki Asao, Hiroaki Yoda, and Akihiro Nitayama. Center for Semiconductor Research ...
Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buffer Layers: Yuji Komatsu, Keiji Hosotani, Takashi Fuyuki and Hiroyuki Matsunami
C: Electronics Society (All Years) In Kyusyu Region. Search Results: Conference Papers Conference Papers (Available on Advance Programs) (Sort: by Committee)
... Naoharu Shimomura 1,Tadashi Kai 1,Shigeki Takahashi1, Sumio Ikegawa1,Makoto Nagamine1, Takeshi Kajiyama2, Masayoshi Iwayama 2,Kuniaki Sugiura 2,Keiji Hosotani 2 ...
Yuji Komatsu, Keiji Hosotani, Takashi Fuyuki and Hiroyuki Matsunami 5431-5435 : ... Shin'ichiro Okude, Kunie Ochiai, Manabu Kuwabara, Masahiko Hasunuma and Takashi ...
Keiji Hosotani, Makoto Nagamine 1, Tomomasa Ueda 1, Hisanori Aikawa 1, Sumio Ikegawa 1, Yoshiaki Asao, Hiroaki Yoda, and Akihiro Nitayama. Center for Semiconductor ...
Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buffer Layers: Yuji Komatsu, Keiji Hosotani, Takashi Fuyuki and Hiroyuki Matsunami
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