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Nobuo Matsumoto Semiconductors 5437-5443 : Inverse Modeling as a Basis for Predictive Device Simulation of Deep Submicron Metal-Oxide-Semiconductor Field Effect Transistors
Nobuo Matsumoto Jpn. J. Appl. Phys. Vol. 37 (1998) 5425; Superconducting Radiation Detectors and Their Future Perspectives Hans Kraus Jpn. J. Appl. Phys. Vol. 37 (1998) 6273
Nobuo Matsumoto Jpn. J. Appl. Phys. 37 (1998) 5425; Superconducting Radiation Detectors and Their Future Perspectives Hans Kraus Jpn. J. Appl. Phys. 37 (1998) 6273
5425-5436: Overview of Silicon-Based Materials * Nobuo Matsumoto: Release Date: 19991001 [Image PDF (1087K)]
Shoji FURUKAWA and Nobuo MATSUMOTO Large Diameter CdTe Single Crystals - Crystal Growth and the Evaluation Osamu ODA,Kazuto HIRATA,Kimihiko IMURA and Fumio TSUJINO
Nobuo Matsumoto Semiconductors 5437-5443 : Inverse Modeling as a Basis for Predictive Device Simulation of Deep Submicron Metal-Oxide-Semiconductor Field Effect ...
Nobuo Matsumoto Jpn. J. Appl. Phys. Vol. 37 (1998) 5425; Superconducting Radiation Detectors and Their Future Perspectives Hans Kraus Jpn. J. Appl. Phys. Vol. 37 (1998) 6273
Nobuo Matsumoto Jpn. J. Appl. Phys. 37 (1998) 5425; Superconducting Radiation Detectors and Their Future Perspectives Hans Kraus Jpn. J. Appl. Phys. 37 (1998) 6273
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