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1C/2001C009 Chemical structure of the SiO 2 /Si(001) interface formed at high temperatures Hiroo OMI, Satoru SUZUKI, Yoshio WATANABE, and Toshio OGINO NTT Basic Research ...
Satoru Isoda, Yoshio Hanazato, Satoshi Ueyama, Satoshi Nishikawa and Kouichi Akiyama. Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi ...
Tadashi Nishikawa, Katsuya Oguri, Satoru Suzuki, Yoshio Watanabe, Otto Zhou and Hidetoshi Nakano: Release Date: 20070903 ...
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