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Anri Nakajima, Ta kuo Ohashi, Shiyang Zhu, Shigeyuki Yokoyama, Shigetomi Michimata, and Hideharu Miyake
Annealing Temperature Dependence on Nickel–Germanium Solid-State Reaction: Shiyang Zhu and Anri Nakajima: Release Date: 20080229 ...
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 8, AUGUST 2006 1805 Mechanism of Dynamic Bias Temperature Instability in p-andnMOSFETs: The Effect of Pulse Waveform Shiyang Zhu, ...
Shiyang Zhu and Anri Nakajima. Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
... LETTERS, VOL. 30, NO. 9, SEPTEMBER 2009 Waveguided Ge/Si Avalanche Photodiode With Separate Vertical SEG-Ge Absorption, Lateral Si Charge, and Multiplication Configuration Shiyang Zhu ...
Anri Nakajima, Ta kuo Ohashi, Shiyang Zhu, Shigeyuki Yokoyama, Shigetomi Michimata, and Hideharu Miyake
... ON ELECTRON DEVICES, VOL. 53, NO. 8, AUGUST 2006 1805 Mechanism of Dynamic Bias Temperature Instability in p-andnMOSFETs: The Effect of Pulse Waveform Shiyang Zhu, Member ...
Annealing Temperature Dependence on NickelGermanium Solid-State Reaction: Shiyang Zhu and Anri Nakajima: Release Date: 20080229 ...
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