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Original paper(Vol.53 No.12 pp.1323) Homoepitaxial Growth on 4H-SiC {0001} -Vicinal Faces. Shun-ichi NAKAMURA, Tsunenobu KIMOTO and Hiroyuki MATSUNAMI
Masahiro Yoshimoto, Takashi Fuyuki and Hiroyuki Matsunami . Articles citing this article. Journal of Applied Physics 75 (1994) 543 Effect of plasma etching, carbon concentration, and ...
Original paper(Vol.50 No.8 pp.904) Strain in GaP Films Heteroepitaxially Grown on Si. Kazuhiro NAKAMURA, Takashi FUYUKI and Hiroyuki MATSUNAMI
Motohiro IWAMI,Masaaki HIRAI, Masahiko KUSAKA,Hatsuo NAKAMURA,Kentaro SHIBAHARA and Hiroyuki MATSUNAMI For Experimenters -- Preparation of High-Tc Oxice Superconductors --
Yuji Komatsu, Keiji Hosotani, Takashi Fuyuki and Hiroyuki Matsunami 5431-5435 : Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under ...
Original paper(Vol.53 No.12 pp.1323) Homoepitaxial Growth on 4H-SiC {0001} -Vicinal Faces. Shun-ichi NAKAMURA, Tsunenobu KIMOTO and Hiroyuki MATSUNAMI
Masahiro Yoshimoto, Takashi Fuyuki and Hiroyuki Matsunami . Articles citing this article. Journal of Applied Physics 75 (1994) 543 Effect of plasma etching, carbon ...
Original paper(Vol.50 No.8 pp.904) Strain in GaP Films Heteroepitaxially Grown on Si. Kazuhiro NAKAMURA, Takashi FUYUKI and Hiroyuki MATSUNAMI
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Gifu Prefecture (Government Administration industry): Senior officer, (2000-2008)