Al Ingal

Up to now a variety of imaging schemes for a phase object have been proposed (Podurets et al., 1989; Ingal and Beliaevskaya, 1995; Davis et al., 1995; Chapman et al., 1997 ...

... type AA that was first proposed by Chapman et al who gave a name diffraction-enhanced imaging (DEI) ; the second one using a Laue type AA (LAA) was proposed by Ingal et ...

Alternatively, us-ingAl 2 O 3 [10], [11]or AlN[12]as capping layer or Al-content metal gate[13]has been used to modify the m eff forp-MOSFET. However, the capping-layer ...