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Devices with subthreshold swing below 60mV/Dec for sharp turn off and turn on. Ph. D. Wei Guannan (C) [M: Liang Yung C] SiC based high breakdown voltage devices.
Devices with subthreshold swing below 60mV/Dec for sharp turn off and turn on. Ph. D. Wei Guannan (C) [M: Liang Yung C] SiC based high breakdown voltage devices.
Mr Wei Guannan: Dept. of Electrical & Computer Engineering, NUS: Status of Progress in Silicon Carbide MOSFET Device: 5 Feb 2007: Dr Lin Hai: Dept. of Electrical & Computer ...
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