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Masaharu Udagawa, Masaaki Niwa and Isao Sumita 379-382 : Time Evolution of Contact-Electrified Electron Dissipation on Silicon Oxide Surface Investigated Using Noncontact Atomic ...
Masaharu Udagawa, Masaaki Niwa and Isao Sumita 286-289 : In-Situ Characterization of Si Surface Oxidation by High-Sensitivity Infrared Reflection Spectroscopic Method
Scanning Tunneling Microscope Observation of Si(111) δ7× 7 Formed by Si Deposition: Hideyuki Tanaka, Takashi Yokoyama and Isao Sumita: Release Date: 19991001
... Hasegawa, Takashi Ide, Masahiro Miyao, Isao Sumita ...
Local Ordering and Lateral Growth of Initial Thermal Oxide of Si(001) Masaharu Udagawa, Masaaki Niwa and Isao Sumita: Release Date: 19991001 [Image PDF (569K)]
Masaharu Udagawa, Masaaki Niwa and Isao Sumita 379-382 : Time Evolution of Contact-Electrified Electron Dissipation on Silicon Oxide Surface Investigated Using ...
Scanning Tunneling Microscope Observation of Si(111) 7× 7 Formed by Si Deposition: Hideyuki Tanaka, Takashi Yokoyama and Isao Sumita: Release Date: 19991001
Masaharu Udagawa, Masaaki Niwa and Isao Sumita 286-289 : In-Situ Characterization of Si Surface Oxidation by High-Sensitivity Infrared Reflection Spectroscopic Method
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