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New Developments in Schottky Source/Drain High-k/Metal Gate CMOS Transistors, by MF Li , Sungjoo Lee, Shiyang Zhu (ECE and Fudan University), Rui Li, Jingde Chen, Albert Chin and ...
IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 8, AUGUST 2004 565 N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide Shiyang Zhu , Member, IEEE , Jingde Chen, M.-F. Li ...
... Kinam Kim, Byung-Il Ryu Samsung Electronics, Korea AF21 A1.7 Oct. 19 15:10 Schottky s/d MOSFETs with high-K gate dielectrics and metal gate electrodes Shiyang Zhu, Jingde Chen ...
Shiyang Zhu, Jingde Chen, M.-F Li, S.J. Lee, Jagar Singh, C. Zhu, Anyan Du, C.H. Tung, Albert Chin, and D.L. Kwong, "N-type Schottky Barrier Source/Drain MOSFET Using ...
IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 8, AUGUST 2004 565 N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide Shiyang Zhu , Member, IEEE , Jingde Chen, M ...
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