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Masafumi Asano. Microelectronics Engineering Laboratory, Toshiba Corp., 8 Shinsugita-cho, Isogoku, Yokohama 235-8522, Japan (Received July 7, 1999; accepted for publication September ...
Kyoko Izuha, Tadahito Fujisawa, Masafumi Asano and Soichi Inoue; Jpn. J. Appl. Phys. 39 (2000) Low-Stress Molybdenum/Silicon Multilayer Coatings for Extreme Ultraviolet Lithography
Keisuke Nakazawa, Eishi Shiobara, Masafumi Asano, Yasuhiko Sato, Satoshi Tanaka and Yasunobu Oonishi. ULSI Process Engineering Laboratory, Microelectronics Engineering ...
Highly Accurate and Precise Measurement Technique for Effective Exposure Dose: Kyoko Izuha, Tadahito Fujisawa, Masafumi Asano and Soichi Inoue: Release Date: 20010629
Fabrication of 0.2 µm Hole Patterns in KrF Excimer Laser Lithography: Masafumi Asano, Kenji Kawano, Satoshi Tanaka and Yasunobu Onishi: Release Date: 19991001
Masafumi Asano. Microelectronics Engineering Laboratory, Toshiba Corp., 8 Shinsugita-cho, Isogoku, Yokohama 235-8522, Japan (Received July 7, 1999; accepted for publication ...
Kyoko Izuha, Tadahito Fujisawa, Masafumi Asano and Soichi Inoue; Jpn. J. Appl. Phys. 39 (2000) Low-Stress Molybdenum/Silicon Multilayer Coatings for Extreme Ultraviolet ...
Keisuke Nakazawa, Eishi Shiobara, Masafumi Asano, Yasuhiko Sato, Satoshi Tanaka and Yasunobu Oonishi. ULSI Process Engineering Laboratory, Microelectronics ...
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