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From engineer Yasuyuki Morishita, Team Manager, Core Development Division (Left) Mototsugu Okushima, Assistant Manager, Core Development Division (Right) This new SCR design technique ...
Mototsugu Okushima and Ko Noguchi 2040-2044 : Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy Masashi Agata, Hideo Wada, Osamu Maida, Koji ...
Influence of Gate Oxide Quality on Plasma Process-Induced Charging Damage in Ultra Thin Gate Oxide: Mototsugu Okushima and Ko Noguchi: Release Date: 20010629
Mototsugu Okushima and Ko Noguchi 2040-2044 : Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy Masashi Agata, Hideo Wada, Osamu ...
Influence of Gate Oxide Quality on Plasma Process-Induced Charging Damage in Ultra Thin Gate Oxide: Mototsugu Okushima and Ko Noguchi: Release Date: 20010629
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NEC Electronics (Privately Held; 10,001 or more employees; Semiconductors industry): ESD Engineer, (April 2000-Apr...