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Ryoji Koizumi, Toshiya Saitoh and Kanji Yoh 1775-1780 : Dominant Electron Trap with Metastable State in Molecular Beam Epitaxial GaAs Grown at Low Temperatures
Kanji Yoh, Ryoji Koizumi, Naotaka Hashimoto, and Shuji Ikeda, "A new high performance transistor ： b-MOSFET," The ...
Fabrication of p +-Gate InAs-Channel HEMT Based on InP: Ryoji Koizumi, Toshiya Saitoh and Kanji Yoh: Release Date: 19991001 [Image PDF (589K)]
Ryoji Koizumi, Toshiya Saitoh and Kanji Yoh 1775-1780 : Dominant Electron Trap with Metastable State in Molecular Beam Epitaxial GaAs Grown at Low Temperatures
Kanji Yoh, Ryoji Koizumi, Naotaka Hashimoto, and Shuji Ikeda, "A new high performance transistor b-MOSFET ...
Fabrication of p +-Gate InAs-Channel HEMT Based on InP: Ryoji Koizumi, Toshiya Saitoh and Kanji Yoh: Release Date: 19991001 [Image PDF (589K)]
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