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Measurements of current collapse in AlGaN/GaN high electron mobility transistors by Kelvin probe force microscopy Tadayoshi TSUCHIYA. Fundamental Lectures
Akihiro Hinoki, Junjiroh Kikawa, Tomoyuki Yamada, Tadayoshi Tsuchiya, Shinichi Kamiya, Masahito Kurouchi, Kenichi Kosaka, Tsutomu Araki, Akira Suzuki, Yasushi Nanishi
Akihiro Hinoki, Junjiroh Kikawa 1, Tomoyuki Yamada 1, Tadayoshi Tsuchiya 1, Shinichi Kamiya 1, Masahito Kurouchi 1, Kenichi Kosaka, Tsutomu Araki, Akira Suzuki 1,2, and ...
... on Off-StateBreakdown Characteristics in GaN Buffer Layer inAlGaN/GaN Heterostructure Field-Effect Transistors Akihiro Hinoki, Junjiroh Kikawa 1, Tomoyuki Yamada 1, Tadayoshi Tsuchiya 1 ...
SUGIYAMA,Saburo: TAKASHIMA,Tadayoshi : TSUCHIYA,Chihiro: TOUYAMA,Ichiro : UDONO,Etsuko (Erika) UDONO,Tomotsugu : YAMADA,Masahiro [ Associate Professors ]
... Department of EECS, University of Michigan, Ann Arbor, Michigan 48109-2122, USA yegor@umich.edu pavlidis@umich. edu http://www.eecs.umich.edu/dp-group/ Tadayoshi Tsuchiya ...
Measurements of current collapse in AlGaN/GaN high electron mobility transistors by Kelvin probe force microscopy Tadayoshi TSUCHIYA. Fundamental Lectures
Akihiro Hinoki, Junjiroh Kikawa, Tomoyuki Yamada, Tadayoshi Tsuchiya, Shinichi Kamiya, Masahito Kurouchi, Kenichi Kosaka, Tsutomu Araki, Akira Suzuki, Yasushi Nanishi
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