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Characterizations of homogeneous bounded domains Characterizations of homogeneous bounded domains
Akio Shima, Ryuta Tsuchiya, Toshiyuki Mine, and Kazuyoshi Torii. Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
Ultra-Shallow Junction Formation by Non-Melt Laser Spike Annealing and its Application to Complementary Metal Oxide Semiconductor Devices in 65-nm Node: Akio Shima and Atsushi Hiraiwa
Akio Shima and Atsushi Hiraiwa Published July 7, 2006 [Full Text PDF (609K)] [Buy This Article] 5716-5719 : A Theoretical Analysis of Electromigration Failure in Aluminum ...
Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kurotshuchi Kenzo, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hiroshi Moriya, Norikatsu Takaura, ...
Characterizations of homogeneous bounded domains Characterizations of homogeneous bounded domains
Akio Shima, Ryuta Tsuchiya, Toshiyuki Mine, and Kazuyoshi Torii. Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
Ultra-Shallow Junction Formation by Non-Melt Laser Spike Annealing and its Application to Complementary Metal Oxide Semiconductor Devices in 65-nm Node: Akio Shima and ...
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