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93, 032108 (2008) , “High-temperature annealing behavior of deep levels in 1 MeV electron irradiated p-type 6 H-SiC”, Giovanni Alfieri and Tsunenobu Kimoto
Kyoto Univ. 1 *Tsunenobu Kimoto 1, Katsunori Danno 1, Giovanni Alfieri 1 : 9: Relationship between performance and reliability of SiC devices and crystal defects
93, 032108 (2008) , “High-temperature annealing behavior of deep levels in 1 MeV electron irradiated p-type 6 H-SiC”, Giovanni Alfieri and Tsunenobu Kimoto
Kyoto Univ. *Kotaro Kawahara, Giovanni Alfieri, Tsunenobu Kimoto: 4: EPR and theoretical identification of di-carbon antisite defects in 4H-SiC
93, 032108 (2008) , “High-temperature annealing behavior of deep levels in 1 MeV electron irradiated p-type 6 H-SiC”, Giovanni Alfieri and Tsunenobu Kimoto
Kyoto Univ. 1 *Tsunenobu Kimoto 1, Katsunori Danno 1, Giovanni Alfieri 1 : 9: Relationship between performance and reliability of SiC devices and crystal defects
93, 032108 (2008) , “High-temperature annealing behavior of deep levels in 1 MeV electron irradiated p-type 6 H-SiC”, Giovanni Alfieri and Tsunenobu Kimoto
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