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Doo-Hyeb Youn, Mohamed Lachab,Maosheng Hao, Tomoya Sugahara,Hironori Takenaka, Yoshiki Naoi and Shiro Sakai 635-644 : Drastic Improvement in Surface Flatness Properties by Using ...
Tomoya Sugahara, Hisao Sato, Maosheng Hao, Yoshiki Naoi, Satoshi Kurai, Satoru Tottori, Kenji Yamashita, Katsushi Nishino, Linda T. Romano and Shiro Sakai
Tomoya Sugahara, Maosheng Hao, Tao Wang, Daisuke Nakagawa, Yoshiki Naoi, Katsusi Nishino and Shiro Sakai: Release Date: 19991001 [Image PDF (969K)]
Maosheng Hao, Tomoya Sugahara, Hisao Sato, Yoshiyuki Morishima, Yoshiki Naoi, Linda T. Romano and Shiro Sakai: Release Date: 19991001 [Image PDF (975K)]
Chua Soo Jin, Peng Li, Maosheng Hao and Zhang Ji, Forming InN and InGaN quantum dots grown by MOCVD, date granted 11 Nov 2003, USA Patent No. :6645885 B2.
Doo-Hyeb Youn, Mohamed Lachab,Maosheng Hao, Tomoya Sugahara,Hironori Takenaka, Yoshiki Naoi and Shiro Sakai 635-644 : Drastic Improvement in Surface Flatness Properties ...
Tomoya Sugahara, Hisao Sato, Maosheng Hao, Yoshiki Naoi, Satoshi Kurai, Satoru Tottori, Kenji Yamashita, Katsushi Nishino, Linda T. Romano and Shiro Sakai
Maosheng Hao, Tomoya Sugahara, Hisao Sato, Yoshiyuki Morishima, Yoshiki Naoi, Linda T. Romano and Shiro Sakai. Department of Electrical and Electronic Engineering ...
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