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Mitsuhiro Horikawa : 8th Author's Affiliation: Elpida Memory, Inc (Elpida Memory) 9th Author's Name: Kuniaki Koyama : 9th Author's Affiliation: Elpida Memory, Inc (Elpida Memory)
7267-7271: Comparison of Iron Gettering Effectiveness in Silicon between Ion-Implantation-Induced Damage and Poly-Crystalline Silicon: Mitsuhiro Horikawa and Koichi Terashima
Mitsuhiro Horikawa and Koichi Terashima 1. ULSI Device Development Division, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan 1 Silicon Systems Research ...
Haruhiko Ono and Mitsuhiro Horikawa L264-L266 : In-Plane Orientation and Polarity of ZnO Epitaxial Films on As-Polished Sapphire (α-Al 2 O 3) (0001) Substrates Grown by Metal Organic ...
Haruhiko Ono, Mitsuhiro Horikawa Jpn. J. Appl. Phys. Vol. 42 (2003) L261; In-Plane Orientation and Polarity of ZnO Epitaxial Films on As-Polished Sapphire (α-Al 2 O 3) (0001) Substrates ...
7267-7271: Comparison of Iron Gettering Effectiveness in Silicon between Ion-Implantation-Induced Damage and Poly-Crystalline Silicon: Mitsuhiro Horikawa and Koichi Terashima
Haruhiko Ono and Mitsuhiro Horikawa L264-L266 : In-Plane Orientation and Polarity of ZnO Epitaxial Films on As-Polished Sapphire (-Al 2 O 3) (0001) Substrates Grown by ...
Mitsuhiro Horikawa and Koichi Terashima 1. ULSI Device Development Division, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan 1 Silicon Systems ...
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