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Inventor: Naoto Fujishima Assignee: Fuji Electric Co, Ltd Patent Office: United States of America Patent and Trademark Office. Granted Patents (USPTO)
Akio Sugi, Mutsumi Sawada, Masatoshi Sugimoto, Shinichiro Matsunaga, Masanobu Iwaya, Naoto Fujishima, Kazumi Takagiwa and Hongfei Lu: Release Date: June 1, 2007
Mutsumi Sawada, Shinichiro Matsunaga (Fuji Electric AT), Masaharu Yamaji, Akio Kitamura (Fuji Electric DT), Naoto Fujishima (Fuji Electric AT) R2006-34 ED2006-179 SDM2006-197
Naoto Fujishima, Akio Kitamura and Gen Tada 574-577 : Characterization of Pb(Zr, Ti)O 3 Thin Films Prepared by Multi-Ion-Beam Sputtering Isaku Kanno, Shigenori Hayashi, Takeshi ...
Mutsumi Sawada, Shinichiro Matsunaga (Fuji Electric AT), Masaharu Yamaji, Akio Kitamura (Fuji Electric DT), Naoto Fujishima (Fuji Electric AT) R2006-34 ED2006-179 SDM2006-197
Akio Sugi, Mutsumi Sawada, Masatoshi Sugimoto, Shinichiro Matsunaga, Masanobu Iwaya, Naoto Fujishima, Kazumi Takagiwa and Hongfei Lu: Release Date: June 1, 2007
Naoto Fujishima, Akio Kitamura and Gen Tada 574-577 : Characterization of Pb(Zr, Ti)O 3 Thin Films Prepared by Multi-Ion-Beam Sputtering Isaku Kanno, Shigenori Hayashi ...
... Reduction Structure at Tip of Electrode Fingers for Low On-Resistance High-Voltage Power Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistors: Naoto Fujishima ...
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