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Tomoya KIGA, Tadashi ASAI, Yukiko MIZUGUCHI, Yosuke MURAKAMI, Shinji TANAKA and Shigetaka TOMIYA: Release Date: October 28, 2008 [PDF (1120K)]
Shigetaka Tomiya (Sony, Japan): Reliability of InGaN LDs. Wayne Johnson (Nitronex, USA): Reliability of GaN on Si FETs. Kurt Smith (Raytheon, USA): Reliability of GaN on SiC FETs
Satoshi Itoh, Norikazu Nakayama, Satoshi Matsumoto, Masaharu Nagai, Kazushi Nakano, Masafumi Ozawa, Hiroyuki Okuyama, Shigetaka Tomiya, Toyoharu Ohata, Masao Ikeda, ...
Shigetaka TOMIYA : Senior Manager & Distinguished Researcher Advanced Materials Laboratories,Sony Corporatio
Shigetaka Tomiya (Sony, Japan) Yoshinao Kumagai (Tokyo Univ. Agr. Technol., Japan) Dirk Ehrentraut (Tohoku Univ., Japan) Soon-Ku Hong (Chungnam National Univ., Korea)
Defects and Degradation of Nitride-based Laser Diodes Shigetaka Tomiya* a, Tomonori Hino b, Takao Miyajima b, Osamu Goto c and Masao Ikeda c a Materials Analysis Laboratory, Sony ...
Tomoya KIGA, Tadashi ASAI, Yukiko MIZUGUCHI, Yosuke MURAKAMI, Shinji TANAKA and Shigetaka TOMIYA: Release Date: October 28, 2008 [PDF (1120K)]
Shigetaka Tomiya (Sony, Japan): Reliability of InGaN LDs. Wayne Johnson (Nitronex, USA): Reliability of GaN on Si FETs. Kurt Smith (Raytheon, USA): Reliability of GaN ...
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