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A Technology-Based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization. Xing Zhou*, Siau Ben Chiah*, and Khee Yong Lim
Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs. Siau Ben Chiah*, Xing Zhou*, and Khee Yong Lim * School of Electrical & Electronic ...
Unified Length-/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width Effects. Siau Ben Chiah*, Xing Zhou*, and Khee Yong Lim
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