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W.K. Fong, B.H. Leung and C. Surya, "Growth and low-frequency noise characterization of GaN thin films on intermediate-temperature buffer layers," to be published in ...
... state-of-the-art Molecular Beam Epitaxy (MBE) and a Metalorganic Chemical Vapour Deposition (MOCVD) facility for the growth of GaN based devices. Professor Surya has ...
B.H. Leung, W.K. Fong, C.F. Zhu AND C. Surya, "Low-frequency noise in gallium nitride thin films deposited by rf-plasma assisted MBE on intermediate-temperature buffer ...
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