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Yuichiro Mitani, Hideki Satake, Hitoshi Ito and Akira Toriumi. Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Experimental Evidence of Nit-related and –unrelated Mechanisms for NBTI with Ultra-thin SiON Gate Dielectric: Author: Shigeto Fukatsu, Daisuke Hagishima, Yuichiro Mitani, Kazuya ...
Ichiro Mizushima, Yuichiro Mitani 1, Mitsuo Koike 2, Masahiko Yoshiki 2, Mitsuhiro Tomita 2 and Sigeru Kambayashi 1. Microelectronics Engineering Laboratory, Toshiba Corporation ...
Kōki Takanashi, Yoshihisa Obi, Yuichiro Mitani and Hiroyasu Fujimori Institute for Materials Research, Tohoku University, Katahira, Aoba-ku, Sendai 980
Yuichiro Mitani Hideki Satake Jpn. J. Appl. Phys. 47 (2008) 1456; AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity
Yuichiro Mitani, Hideki Satake, Hitoshi Ito and Akira Toriumi. Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522 ...
Experimental Evidence of Nit-related and unrelated Mechanisms for NBTI with Ultra-thin SiON Gate Dielectric: Author: Shigeto Fukatsu, Daisuke Hagishima, Yuichiro Mitani ...
Ichiro Mizushima, Yuichiro Mitani 1, Mitsuo Koike 2, Masahiko Yoshiki 2, Mitsuhiro Tomita 2 and Sigeru Kambayashi 1. Microelectronics Engineering Laboratory, Toshiba ...
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